What is a LVDT sensor?

V. a) Sketch a 3 input NOR gate with transistor widths chosen to achieve effective rise and fall resistance equal to that of a unit inverter ( R). Assume all the diffusion nodes are contacted. Draw the equivalent circuit for the falling output transition and the rising output transition.

the message signal m(t) has the Fourier transform shown in Figure P-3.11(a). This signal is applied to the system shown in Figure P-3.11(b) to generate the signal y(t).The 1. Plot Y(f), the Fourier transform of y(t). 2. Show that if y(t) is transmitted, the receiver can pass it through a replica of the system shown in Figure P-3.11 (b) to obtain m(t) back. This means that this system can be used as a simple scrambler to enhance communication privacy.

4. Design a combinational circuit with inputs a, b, c, d and outputs w, x, Y, z. Assume that the inputs a, b, c, d represent a 4-bit signed number (2s complement). The output is also a signed number in which is the 2s complement of the input.

Question 5 (Programmable Logic): Tabulate the PLA programming table for the four Boolean functions listed below.Minimize the number of product terms and draw the PLA circuit. A(x, y, z)=\sum(0,1,5,7) B(x, y, z)=\sum(2,4,5,6) C(x, y, z)=\sum(0,1,2,3,4) D(x, y, z)=\sum(3,6,7)

1. Suppose we have the signal x(n) = (0.9)^n u(n-50) as input to the LTI system with impulse response h(n)= (0.8)^n u(n). a) Compute (using a for-loop) and plot the output y(n) for 0 <= n <= 100. You might want to use the MATLAB function "stem" to plot. b) Compare this to theory. c) Repeat (a-b) for h(n) = (-0.8)^n u(n).

An array of 10 isotropic elements are placed along the z-axis a distance d apart. Assum-ing uniform distribution, find the progressive phase (in degrees), half-power beam width (in degrees), first-null beam width (in degrees), first side lobe level maximum beam width (indegrees), relative side lobe level maximum (in dB), and directivity (in dB) (using equations and the computer program Directivity of Chapter 2, and compare) for (a) broadside (b) ordinary end-fire (c) Hansen-Woodyard end-fire

9. If a GSM timeslot consists of 6 trailing bits, 8.25 guard bits, 26 training bits, and 2 traffic bursts of 58 bits of data. Find the total number of bits in each time slot. If a frame has 8 slots, find the total number of bits in each frame, also calculate overhead bits in each frame and frame efficiency.

Figure 1 is a dimensioned plot of the steady state carrier concentrations inside a pn step junction diode maintained at room temperature. Is the diode in forward or reverse bias? Explain your answer. Does low level injec tion prevail? Explain your answer. What are the p- and n-side doping concentrations? Determine the applied voltage, VA. Determine the built-in potential, Vi- If we know this diode is made of silicon, determine the width of the depletionregion, W.

2. (Streetman 6th 5.24 modified) In a p+-n junction reverse biased at 10 V,the capacitance is 10 pF. If the doping of the n side is doubled and there verse bias changed to 80 V, what is the capacitance? What is the maximum doping on the n side (after doubling) that makes it possible to apply a reverse bias of 80 V in silicon? In GaAs? (see Figure 5-22)

2.8. Determine and sketch the convolution of the following two signals: [1+1, 0≤t≤1 1 <1 ≤ 2, elsewhere x(t) = 2-1, 0, h(t) = 8(t + 2) + 28(1 + 1)./nQ.4 Textbook P.2.8